ON Semiconductor msb1218a-rt1-d free download

File name msb1218a-rt1-d.pdf

MSB1218A- RT1G - PNP Silicon General Purpose Amplifier Transistor This PNP Silicon Epitaxial Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC--70/SOT--323 package which is designed for low power surface http://onsemi.com mount applications. Features COLLECTOR 3 High hFE, 210 -- 460 Low VCE(sat), < 0.5 V These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TA = 25C) 1 2 Rating Symbol Value Unit BASE EMITTER Collector--Base Voltage V(BR)CBO 45 Vdc Collector--Emitter Voltage V(BR)CEO 45 Vdc 3 Emitter--Base Voltage V(BR)EBO 7.0 Vdc 1 2 Collector Current -- Continuous IC 100 mAdc Collector Current -- Peak IC(P) 200 mAdc SC- -70 (SOT--323) CASE 419 THERMAL CHARACTERISTICS STYLE 4 Rating Symbol Max Unit Power Dissipation (Note 1) PD 150 mW MARKING DIAGRAM Junction Temperature TJ 150 C Storage Temperature Range Tstg -- 55 to +150 C ELECTRICAL CHARACTERISTICS BR M G G Characteristic Symbol Min Max Unit Collector--Emitter Breakdown Voltage V(BR)CEO 45 -- Vdc 1 (IC = 2.0 mAdc, IB = 0) Collector--Base Breakdown Voltage